论文信息 - RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a total width of 2times150 mum. Final passivated performance values for these devices are Imax=1279 mA/mm, IDSS=1182 mA/mm, Rc=0.43 Omegamiddotmm, rhos=315 Omega/sq, fT=45 GHz, fmax(MAG) =64 GHz, and gm=268 mS/mm. Continuous-wave power measurements at 10 GHz produced Psat=3.8 W/mm, Gt=8.6 dB, and PAE=30% at VDS=20 V at 25% IDSS. To our knowledge, these are the first power measurements reported at 10 GHz for this material

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