论文信息 - Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

Previous work has shown that III‐V semiconductor multilayer films can be designed to serve as Bragg reflector mirrors in optoelectronic devices. In this letter we extend that work to the fabrication of high reflectivity GexSi1−x/Si mirrors. Column IV designs are constrained both by the small refractive index between Si and GexSi1−x alloys and the limitations of strained layer epitaxy that can produce misfit dislocations in thick mirror stacks. Despite these limitations, we report on mirrors with reflectivities of over 50% at 1.5 μm. Furthermore, certain mirrors were overgrown with p‐i‐n diodes to demonstrate the feasibility of operation in a vertically illuminated, resonant cavity mode.

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