Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems

To understand the feasibility of using strain to reduce the nonradiative Auger recombination rate of 1.5 μm semiconductor lasers, we have directly measured the radiative and nonradiative Auger recombination rates in strained‐layer InGaAs/AlGaInAs quantum‐well systems, using time‐resolved photoluminescence measurements. We find that the Auger recombination rate can be reduced in either biaxial compressively or tensilely strained quantum‐well structures. A longer radiative carrier lifetime is observed for the tensile‐strained materials. The effect of strain and quantum confinement on the carrier lifetime is discussed.

[1]  Eli Yablonovitch,et al.  Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .

[2]  B. Sermage,et al.  Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs , 1986 .

[3]  S. Hiyamizu,et al.  Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) Heterostructures , 1986 .

[4]  Chuang,et al.  Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. , 1992, Physical review. B, Condensed matter.

[5]  C. Zah,et al.  Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers , 1991 .

[6]  A. Sugimura,et al.  Band-to-band Auger recombination effect on InGaAsP laser threshold , 1981 .

[7]  A. Yariv,et al.  Auger recombination in quantum-well InGaAsP heterostructure lasers , 1982 .

[8]  L. F. Tiemeijer,et al.  High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers , 1991 .

[9]  Niloy K. Dutta,et al.  Long wavelength semiconductor lasers , 1988, Technical Digest., International Electron Devices Meeting.

[10]  Doyeol Ahn,et al.  Optical gain in a strained-layer quantum-well laser , 1988 .

[11]  A. R. Adams,et al.  Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .

[12]  R. Olshansky,et al.  Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources , 1984 .

[13]  A. Haug.  Relations between theT0 values of bulk and quantum-well GaAs , 1987 .