Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures ☆
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Z. Remeš | R. Kalish | Y. Avigal | M. Nesladek | S. Koizumi | C. Uzan-Saguy | E. Baskin
[1] Z. Remeš,et al. Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures , 2003 .
[2] A. Poruba,et al. Fourier transform photocurrent spectroscopy of dopants and defects in CVD diamond , 2003 .
[3] K. Haenen,et al. Phonon-assisted electronic transitions in phosphorus-doped n-type chemical vapor deposition diamond films , 2001 .
[4] M. Stutzmann,et al. Long living excited states in boron doped diamond , 2001 .
[5] H. Kanda,et al. Phosphorus-doped chemical vapor deposition of diamond , 2000 .
[6] H. Kanda,et al. Electronic states of phosphorus in diamond , 2000 .
[7] A. Deneuville,et al. Boron-related infra-red absorption in homoepitaxial diamond films , 1998 .
[8] A. Deneuville,et al. Activation energy in low compensated homoepitaxial boron-doped diamond films 1 Paper presented at th , 1998 .
[9] Yoichiro Sato,et al. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films , 1997 .
[10] R. Kalish,et al. Damage threshold for ion‐beam induced graphitization of diamond , 1995 .
[11] N. Fujimori,et al. Characterization of conducting diamond films , 1986 .
[12] R. Ulbrich. Low density photoexcitation phenomena in semiconductors: Aspects of theory and experiment , 1978 .