Low-frequency waveform engineering technique for class-F microwave power amplifier design

The manuscript details a harmonically-tuned power amplifier design methodology, that is based on the low-frequency experimental characterization of the time-domain I/V waveforms at the device current generator plane jointly with a model-based description of the device capacitances. The proposed approach, allowing to compute in a wide range of frequencies the optimal terminations at the design fundamental frequency and its harmonics, is particularly indicated for the design of wideband high-efficiency power amplifiers. Several experimental data, based on GaN technology, are proposed in order to prove the effectiveness of the methodology.

[1]  D. Schreurs,et al.  Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design , 2010, IEEE Transactions on Microwave Theory and Techniques.

[2]  A. Raffo,et al.  A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load Line , 2009, IEEE Transactions on Microwave Theory and Techniques.

[3]  S. C. Cripps,et al.  RF Power Amplifiers for Wireless Communications , 1999 .

[4]  Valeria Vadala,et al.  Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System , 2010, IEEE Transactions on Microwave Theory and Techniques.

[5]  Valeria Vadala,et al.  A low-cost and accurate technique for the prediction of load-pull contours , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[6]  Franco Giannini,et al.  High Efficiency RF and Microwave Solid State Power Amplifiers , 2009 .

[7]  A. L. Clarke,et al.  The Continuous Class-F Mode Power Amplifier , 2010, The 5th European Microwave Integrated Circuits Conference.