论文信息 - Optimized growth of BGaAs by molecular beam epitaxy

Optimized growth of BGaAs by molecular beam epitaxy

Abstract B x Ga (1− x ) As alloys have been grown by molecular beam epitaxy. Reducing growth temperature below 540°C and increasing the V/III flux ratio above 20 improved boron incorporation in the epitaxial layers while preserving crystal quality. Higher growth temperatures and lower V/III ratios lead to significant amounts of B incorporation on interstitial lattice sites. With optimized growth conditions, pseudomorphic B x Ga (1− x ) As films with x =0.078 have been grown with good crystal quality and no detectable interstitial B incorporation.

[1] H. Ohno,et al. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW TEMPERATURES UNDER HIGH AS OVERPRESSURE , 1997 .

[2] A. Gossard,et al. Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperatures , 1994 .

[3] R. A. Ruehrwein,et al. The Preparation and Properties of Boron Phosphides and Arsenides1 , 1960 .

[4] John F. Geisz,et al. Epitaxial growth of BGaAs and BGaInAs by MOCVD , 2001 .

[5] Eicke R. Weber,et al. Native point defects in low‐temperature‐grown GaAs , 1995 .

[6] Electronic structure of BAs and boride III-V alloys , 2000, cond-mat/0009063.

[7] Matthias Scheffler,et al. Novel Diffusion Mechanism on the GaAs(001) Surface: The Role of Adatom-Dimer Interaction , 1997 .

[8] Paulus,et al. Cohesive energies of cubic III-V semiconductors. , 1996, Physical review. B, Condensed matter.

[9] Volker Gottschalch,et al. MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (0 0 1) GaAs , 2003 .

[10] Gary W. Wicks,et al. Molecular beam epitaxial growth of BGaAs ternary compounds , 2000 .

[11] R. Asomoza,et al. Spinodal decomposition in the BxGayIn1−x−yAs alloys , 2001 .

[12] William E. Hoke,et al. Molecular‐beam epitaxial growth of boron‐doped GaAs films , 1993 .

[13] F. Alexandre,et al. Growth and characterization of high quality BxGa1−xAs/GaAs(0 0 1) epilayers , 2003 .