论文信息 - Vertical-cavity semiconductor optical amplifiers

Vertical-cavity semiconductor optical amplifiers

The structure of our vertical cavity semiconductor optical amplifier (VCSOA) is shown. The device was optically pumped through the substrate and bottom mirror using a 980 nm pump laser diode, and was operated in reflection mode. Two high reflectivity GaAs-AlGaAs distributed Bragg reflector (DBR) mirrors were wafer bonded to an InP-InGaAsP multiple quantum well (MQW) active region consisting of three sets of seven InAsP QWs.

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