论文信息 - Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

Institute of Atomic Energy, 05-400 Otwock, Świerk, Poland Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland Institute of Electronic Materials Technology Wólczyńska 133, 01-919 Warsaw, Poland Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland Materials Physics, Rudjer Boskovic Institute, 10000 Zagreb, Croatia State Key Laboratory of Silicon Materials, Zhenjiang University Hangzhou 310027, China HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany

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