Accurate modeling of simultaneous switching noise in low voltage digital VLSI

The origin and the effect of the simultaneous switching noise (SSN) in CMOS output drivers are explained. A new simultaneous switching noise model which includes the velocity saturation effect is presented. SPICE level 3 simulations for 0.8 /spl mu/m are used to compare this new model with the other recently reported two SSN models at three different supply voltage levels. The new SSN model is derived and proved with SPICE simulations. The results of the simulations show that the new model is more accurate than the other models, especially in the case of low voltage, and large number of output buffers.