论文信息 - HgCdTe all‐epitaxial semiconductor/semimetal Schottky photodiode

HgCdTe all‐epitaxial semiconductor/semimetal Schottky photodiode

We propose and demonstrate an all‐epitaxial semiconductor/semimetal Schottky (S3) photodiode based on an n‐type Hg0.56Cd0.46 Te/HgTe isotype heterojunction. The structure, grown using molecular beam epitaxy, was fabricated into back‐illuminated mesa diodes. A 40‐μm‐diam photodiode shows room‐temperature rectification and high efficiency photoresponse, with a long‐wavelength cutoff of 2.43 μm and a peak quantum efficiency of 44% at 2.0 μm for 250 mV of reverse bias. The dark current at this bias is 100 μA.

C. Burrus | J. Zyskind | J. Sulhoff | R. F. Austin | R. Feldman

[1] J. Schulman,et al. Band‐edge properties of Hg‐based superlattices , 1989 .

[2] R. D. Feldman,et al. Room‐temperature confinement and photoluminescence near 3 μm from HgCdTe multiple quantum wells , 1989 .

[3] Carl E. Bonner,et al. Effects of Zn to Te ratio on the molecular‐beam epitaxial growth of ZnTe on GaAs , 1988 .

[4] I. Sou,et al. Mercury cadmium telluride junctions grown in situ by molecular-beam epitaxy , 1988 .

[5] R. Opila,et al. Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy , 1988 .

[6] I. Sou,et al. MERCURY CADMIUM TELLURIDE N-ISOTYPE HETEROJUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY , 1987 .

[7] M. Lines. The Search for Very Low Loss Fiber-Optic Materials , 1984, Science.

[8] J. Gannon. Optical fibre materials for operating wavelengths larger than 2 μm , 1980 .

[9] J. Thompson,et al. The growth of CdHgTe by metalorganic chemical vapour deposition for optical communication devices , 1988 .

[10] M. Kinch. Materials Requirements for IR Detectors and Imagers , 1986 .