Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm

We report on the design, fabrication and performance of a quantum-dot (QD) resonant-cavity separate absorption, charge, and multiplication avalanche photodiode (APD). The device was grown on GaAs using molecular beam epitaxy and was designed to detect light near 1.06 /spl mu/m. The absorbing region consists of a stack of five self-assembled QD layers, that were formed by the deposition of six monolayers of In/sub 0.5/Ga/sub 0.5/As, with GaAs spacer layers. The peak efficiency at 1.06 /spl mu/m is 57% with a spectral bandwidth of 1.3 nm. The photodiode exhibits low dark current, low multiplication noise (k<0.3), good gain characteristics and a low-breakdown voltage (/spl sim/15 V), which is much lower than that of Si-based APD's operating at 1.06 /spl mu/m.

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