Ga1_xMnxP Synthesized by Ion Implantation and Pulsed-Laser Melting

[1]  Thole,et al.  X-ray circular dichroism and local magnetic fields. , 1993, Physical review letters.

[2]  High-temperature hall effect in ga1-xmnxas , 2003, cond-mat/0302013.

[3]  B. Clerjaud.  Transition-metal impurities in III-V compounds , 1985 .

[4]  In1−xMnxSb—a narrow-gap ferromagnetic semiconductor , 2003, cond-mat/0303212.

[5]  J. Beeman,et al.  Compositional tuning of ferromagnetism in Ga1−xMnxP , 2006, cond-mat/0608133.

[6]  A. MacDonald,et al.  Ferromagnetic semiconductors: moving beyond (Ga,Mn)As , 2005, cond-mat/0503185.

[7]  Hiro Munekata,et al.  FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS/GASB , 1997 .

[8]  J Stephens,et al.  Impurity band conduction in a high temperature ferromagnetic semiconductor. , 2006, Physical review letters.

[9]  H. Ohno,et al.  Character of states near the Fermi level in (Ga,Mn)as : Impurity to valence band crossover , 2007, 0707.0665.

[10]  M. Sawicki,et al.  Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors , 2005 .

[11]  L. Largeau,et al.  Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers , 2008, 0807.0748.

[12]  H. Huebl,et al.  Magnetic anisotropy of Ga1−xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance , 2006 .

[13]  Thole,et al.  X-ray circular dichroism as a probe of orbital magnetization. , 1992, Physical review letters.

[14]  M. Mackenzie,et al.  Surface effects in Mn L3,2 x-ray absorption spectra from (Ga,Mn)As , 2004 .

[15]  H. Ohno,et al.  Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors , 2000, cond-mat/0007190.

[16]  Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field , 1999, cond-mat/9909393.

[17]  S. Sarma,et al.  Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[18]  Tomasz Wojtowicz,et al.  Effect of the location of Mn sites in ferromagnetic GaMnAs on its Curie temperature , 2002 .

[19]  T. Jungwirth,et al.  Theory of magnetic anisotropy in III 1 − x Mn x V ferromagnets , 2001 .

[20]  Stuart A. Wolf,et al.  Spintronics : A Spin-Based Electronics Vision for the Future , 2009 .

[21]  A. Rushforth,et al.  Compositional dependence of ferromagnetism in (Al,Ga,Mn)As magnetic semiconductors , 2008 .

[22]  Michael A. Scarpulla,et al.  Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting , 2006 .

[23]  Y. Suzuki,et al.  Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting , 2008, 0804.1612.

[24]  Origin of uniaxial magnetic anisotropy in epitaxial InMnAs thin films , 2006 .

[25]  Harrison,et al.  Electronic structure and properties of d- and f-shell-metal compounds. , 1987, Physical review. B, Condensed matter.

[26]  D D Awschalom,et al.  Giant planar Hall effect in epitaxial (Ga,Mn)as devices. , 2003, Physical review letters.

[27]  Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films , 2005, cond-mat/0505322.

[28]  Michael A. Scarpulla,et al.  Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting , 2003 .

[29]  H. Ohno,et al.  Making nonmagnetic semiconductors ferromagnetic , 1998, Science.

[30]  X. Liu,et al.  Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling , 2002 .

[31]  X. Liu,et al.  Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing , 2008 .

[32]  Quantitative study of magnetotransport through a (Ga,Mn)As single ferromagnetic domain , 2004, cond-mat/0412290.

[33]  H. Ohno,et al.  Magnetotransport properties of (Ga, Mn)Sb , 2000 .

[34]  R. Farshchi,et al.  MnL3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1−xMnxP , 2006 .

[35]  E. Janzén,et al.  Electronic structure of the GaAs:MnGa center , 1997 .

[36]  Compensation-dependent in-plane magnetization reversal processes in Ga 1 − x Mn x P 1 − y S y , 2008, 0811.0385.

[37]  M A Scarpulla,et al.  Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band. , 2005, Physical review letters.

[38]  H. Ohno,et al.  Electric-field control of ferromagnetism , 2000, Nature.

[39]  C. Foxon,et al.  Ferromagnetic moment and antiferromagnetic coupling in (Ga,Mn)As thin films , 2005 .

[40]  C. Foxon,et al.  Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1−xMnxAs , 2002, cond-mat/0209123.

[41]  A. Menzel,et al.  Uniaxial in-plane magnetic anisotropy of Ga1−xMnxAs , 2004 .

[42]  X. Liu,et al.  Strain-engineered ferromagnetic In1−xMnxAs films with in-plane easy axis , 2005 .

[43]  Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors , 2006, cond-mat/0609158.

[44]  Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy , 2001 .

[45]  T. Jungwirth,et al.  Theory of ferromagnetic (III, Mn) V semiconductors , 2006, cond-mat/0603380.

[46]  M. Brandt,et al.  Ga1−x Mn x P Synthesized by Ion Implantation and Pulsed-Laser Melting , 2007, Handbook of Spintronic Semiconductors.

[47]  Michael A. Scarpulla,et al.  Ferromagnetic Ga1-xMnx as Films Produced by Ion Implantation and Pulsed Laser Melting , 2003 .

[48]  X. Liu,et al.  Competition between cubic and uniaxial anisotropy in Ga 1-x Mn x As in the low-Mn-concentration limit , 2005 .

[49]  Kaiyou Wang,et al.  p-type conductivity in cubic (Ga,Mn)N thin films , 2005 .

[50]  A. Fert,et al.  Magnetization reversal in GaMnAs layers studied by Kerr effect , 2002 .

[51]  H. Ohno,et al.  Zener model description of ferromagnetism in zinc-blende magnetic semiconductors , 2000, Science.

[52]  Xiaofeng Liu,et al.  Ferromagnetic resonance in Ga 1 − x Mn x As : Effects of magnetic anisotropy , 2003 .

[53]  P. Baeri.  Pulsed laser quenching of metastable phases , 1994 .

[54]  Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. , 2002, Physical review letters.

[55]  Kazunori Sato,et al.  Low-temperature ferromagnetism in (Ga, Mn)N: Ab initio calculations , 2004 .

[56]  A. Zunger,et al.  Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb , 2004, cond-mat/0409296.

[57]  F. Matsukura,et al.  Temperature Peculiarities of Magnetic Anisotropy in (Ga,Mn)As: The Role of the Hole Concentration , 2003 .

[58]  H. Ohno,et al.  (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs , 1996 .

[59]  H. Ohno,et al.  Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain , 2004 .

[60]  C. W. White.  LASER ANNEALING OF SEMICONDUCTORS , 1982 .

[61]  Martin S. Brandt,et al.  Prospects for carrier‐mediated ferromagnetism in GaN , 2003 .

[62]  Hidenobu Hori,et al.  Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0 0 0 1) showing the ferromagnetic behaviour at room temperature , 2001 .

[63]  John M. Zavada,et al.  Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy , 2002 .

[64]  J. Beeman,et al.  Nonmagnetic compensation in ferromagnetic Ga1−xMnxAs and Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting , 2008 .