O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

We report an O-band optical modulator from a Ge/Si0.15Ge0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si0.15Ge0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range.

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