Low-inductance module construction for high speed, high-current IGBT module suitable for electric vehicle application

A low-inductance IGBT (insulated-gate bipolar transistor) module construction is presented. Sufficiently low stray inductance in the module has been realized by adopting a multilayered DBC (direct bond copper) substrate, optimally designed terminals, and the optimum arrangement of terminals. This module construction has made possible high-speed and high-current switching operation with low overshoot voltage. A 600-V/400-A half-bridge circuit is constructed with about 80% of the package size for a conventional module. This module is particularly suitable for 40-50 kW electric vehicle applications.<<ETX>>