Perspective On Gallium Nitride

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[2]  Masashi Mizuta,et al.  Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine , 1986 .

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[5]  H. Amano,et al.  Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3 , 1984 .

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[7]  Sadafumi Yoshida,et al.  Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates , 1983 .

[8]  Herbert A. Will,et al.  Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .

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[10]  J. Hutchby,et al.  Photoluminescence of ion‐implanted GaN , 1976 .

[11]  D. K. Ferry,et al.  Hot electron microwave conductivity of wide bandgap semiconductors , 1976 .

[12]  J. W. Matthews,et al.  Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers , 1976 .

[13]  R. Madar,et al.  High pressure solution growth of GaN , 1975 .

[14]  Jacques I. Pankove,et al.  Blue Anti-Stokes Electroluminescence in GaN , 1975 .

[15]  Bo Monemar,et al.  Fundamental energy gap of GaN from photoluminescence excitation spectra , 1974 .

[16]  J. Pankove,et al.  Photoemission from GaN , 1974 .

[17]  A. Tempel,et al.  Cubic phase gallium nitride by chemical vapour deposition , 1974 .

[18]  Marc Ilegems,et al.  Electrical properties of n-type vapor-grown gallium nitride , 1973 .

[19]  C. C. Wang,et al.  Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel , 1973 .

[20]  Jacques I. Pankove,et al.  Violet luminescence of Mg‐doped GaN , 1973 .

[21]  Kazuo Nakajima,et al.  Fundamental absorption edge in GaN, InN and their alloys , 1972 .

[22]  J. Pankove,et al.  GaN blue light-emitting diodes , 1972 .

[23]  R. F. Leheny,et al.  Stimulated Emission and Laser Action in Gallium Nitride , 1971 .

[24]  P. J. Dean,et al.  Optical studies of the phonons and electrons in gallium nitride , 1970 .

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[26]  H. G. Grimmeiss,et al.  Über die Kantenemission und andere Emissionen des GaN , 1959 .

[27]  R. Juza,et al.  Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und Metallnitride , 1938 .

[28]  J. Pankove Properties of Gallium Nitride , 1987 .

[29]  V. Riede,et al.  On the origin of free carriers in high‐conducting n‐GaN , 1983 .

[30]  Jacques I. Pankove,et al.  Luminescence in GaN , 1973 .