论文信息 - Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] - 字舞流文

Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

A. E. Belyaev | C. T. Foxon | Colin J. Humphreys | Menno J. Kappers | Laurence Eaves | C. Humphreys | L. Eaves | S. Novikov | O. Makarovsky | A. Belyaev | Sergei V. Novikov | Oleg Makarovsky | M. Kappers

[1] Jen-Inn Chyi,et al. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy , 2002 .