Defects and impurities in thermal oxides on silicon

Oxides grown at 1100 °C in dry oxygen for 60 min to a thickness of 1350 A on silicon with and without subsequent forming gas anneals were 60Co γ irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic resonance measurements at 10 K revealed ≊3×1017 atomic hydrogen/cm3 and ∼1017 oxygen‐hole centers/cm3 in the oxide. The paramagnetic dangling bond on the silicon side of the Si/SiO2 interface (Pb center) was also observed. The (relative) concentration of these centers was measured as a function of isochronal annealing between 10 and 300 K.

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