The effect of ultra-thin Al2O3 layers on the dielectric properties of LaAlO3 thin film on silicon
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[1] H. B. Lu,et al. High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer , 2003 .
[2] R. Devine. Infrared and electrical properties of amorphous sputtered (LaxAl1−x)2O3 films , 2003 .
[3] H. Ishiwara,et al. Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition , 2003 .
[4] I. Baumvol,et al. Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si. , 2000, Physical review letters.
[5] I. E. Korsakov,et al. Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth , 2000 .
[6] K. Hradil,et al. RF-magnetron sputtered lanthanum aluminate buffer layers on silicon , 1991 .
[7] George A. Samara,et al. Low‐temperature dielectric properties of candidate substrates for high‐temperature superconductors: LaAlO3 and ZrO2 : 9.5 mol % Y2O3 , 1990 .
[8] S. Geller,et al. Crystallographic studies of perovskite‐like compounds. II. Rare earth alluminates , 1956 .
[9] Lifeng Liu,et al. Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures , 2003 .
[10] T. Sajavaara,et al. Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy , 2001 .
[11] Eduard A. Cartier,et al. High-resolution depth profiling in ultrathin Al2O3 films on Si , 2000 .