Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 µm

Heteroepitaxial bonding of III–V materials, mainly InP on Si, without any intermediate dielectric layer, shall allow 1 55µm operating devices to be designed including nano-structuration for tailored spectral operation and no thermal limitation of performances. Bonded surfaces should be limited to the areas of active devices only. Preliminary results evidence the successful bonding of InGaAs quantum wells on Si.