3D analysis of advanced nano-devices using electron and atom probe tomography.

The structural and chemical properties of advanced nano-devices with a three-dimensional (3D) architecture have been studied at the nanometre scale. An original method has been used to characterize gate-all-around and tri-gate silicon nanowire transistor by combining electron tomography and atom probe tomography (APT). Results show that electron tomography is a well suited method to determine the morphological structure and the dimension variations of devices provided that the atomic number contrast is sufficient but without an absolute chemical identification. APT can map the 3D chemical distribution of the atoms in devices but suffers from strong distortions in the dimensions of the reconstructed volume. These may be corrected using a simple method based on atomic density correction and electron tomography data. Moreover, this combination is particularly useful in helping to understand the evaporation mechanisms and improve APT reconstructions. This paper demonstrated that a full 3D characterization of nano-devices requires the combination of both tomography techniques.

[1]  D. Blavette,et al.  Atomic-scale APFIM and TEM investigation of grain boundary microchemistry in Astroloy nickel base superalloys , 1996 .

[2]  W. Vandervorst,et al.  Atom probe analysis of a 3D finFET with high-k metal gate. , 2011, Ultramicroscopy.

[3]  D. Brandon.  On field evaporation , 1966 .

[4]  D. Muller,et al.  Three-dimensional imaging of nonspherical silicon nanoparticles embedded in silicon oxide by plasmon tomography , 2006 .

[5]  S. Bals,et al.  Measuring porosity at the nanoscale by quantitative electron tomography. , 2010, Nano letters.

[6]  D. DeRosier,et al.  The reconstruction of a three-dimensional structure from projections and its application to electron microscopy , 1970, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[7]  P. Bleuet,et al.  Four-dimensional spectral low-loss energy-filtered transmission electron tomography of silicon nanowire-based capacitors , 2012 .

[8]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[9]  F Vurpillot,et al.  A model to predict image formation in Atom probe Tomography. , 2013, Ultramicroscopy.

[10]  J. Biskupek,et al.  Optimization of STEM tomography acquisition--a comparison of convergent beam and parallel beam STEM tomography. , 2010, Ultramicroscopy.

[11]  Jean-Pierre Colinge,et al.  Multiple-gate SOI MOSFETs: device design guidelines , 2002 .

[12]  François Vurpillot,et al.  Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors , 2009 .

[13]  D. Blavette,et al.  An atom probe for three-dimensional tomography , 1993, Nature.

[14]  L. Liz‐Marzán,et al.  Atomic-scale determination of surface facets in gold nanorods. , 2012, Nature materials.

[15]  B. Gault,et al.  Design of a femtosecond laser assisted tomographic atom probe , 2006 .

[16]  Tien T. Tsong,et al.  Field ion image formation , 1978 .

[17]  Guido Schmitz,et al.  On the Field Evaporation Behavior of Dielectric Materials in Three-Dimensional Atom Probe: A Numeric Simulation , 2010, Microscopy and Microanalysis.

[18]  B. Deconihout,et al.  Field evaporation: A kinetic Monte Carlo approach on the influence of temperature , 2011 .

[19]  G. Schmitz,et al.  Influence of the microstructure on the interreaction of Al/Ni investigated by tomographic atom probe , 2002 .

[20]  Blavette,et al.  Three-dimensional atomic-scale imaging of impurity segregation to line defects , 1999, Science.

[21]  P. Midgley,et al.  Embedded Nanostructures Revealed in Three Dimensions , 2005, Science.

[22]  G. Kellogg,et al.  Pulsed-laser atom-probe field-ion microscopy , 1980 .

[23]  T. Ernst,et al.  Electron tomography of gate-all-around nanowire transistors , 2010 .

[24]  P. Midgley,et al.  Four-dimensional spectral tomography of carbonaceous nanocomposites. , 2006, Nano letters.

[25]  Michael K Miller,et al.  Local magnification effects in the atom probe , 1990 .

[26]  D. Blavette,et al.  An improved reconstruction procedure for the correction of local magnification effects in three‐dimensional atom‐probe , 2007, 0907.5067.

[27]  A. Nishida,et al.  Dopant distributions in n-MOSFET structure observed by atom probe tomography. , 2009, Ultramicroscopy.

[28]  Wilfried Vandervorst,et al.  Conformal Doping of FINFET's: A Fabrication and Metrology Challenge , 2008, VLSI-TSA 2008.

[29]  G. Tendeloo,et al.  Three-dimensional atomic imaging of crystalline nanoparticles , 2011, Nature.

[30]  D. Blavette,et al.  A new approach to the interpretation of atom probe field-ion microscopy images. , 2001, Ultramicroscopy.

[31]  F. Gourbilleau,et al.  Si nanoparticles in SiO2 An atomic scale observation for optimization of optical devices , 2009 .

[32]  Vurpillot,et al.  The shape of field emitters and the ion trajectories in three‐dimensional atom probes , 1999, Journal of microscopy.

[33]  P. Gilbert.  Iterative methods for the three-dimensional reconstruction of an object from projections. , 1972, Journal of theoretical biology.

[34]  M Gruber,et al.  Pragmatic reconstruction methods in atom probe tomography. , 2011, Ultramicroscopy.

[35]  Sylvain Barraud,et al.  3D spatial resolution improvement by dual-axis electron tomography: application to tri-gate transistors. , 2014, Ultramicroscopy.

[36]  P. Eyben,et al.  Conformal Doping of FINFET's: A Fabrication and Metrology Challenge , 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

[37]  Y. Nozawa,et al.  Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography , 2012 .

[38]  A. Asenov,et al.  Where Do the Dopants Go? , 2005, Science.

[39]  J. D. Olson,et al.  Toward atom probe tomography of microelectronic devices , 2011 .

[40]  Thomas Ernst,et al.  Hydrogen annealing of arrays of planar and vertically stacked Si nanowires , 2007 .

[41]  A. Nishida,et al.  Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography , 2012 .

[42]  Martin M. Frank,et al.  Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges , 2006, IBM J. Res. Dev..