Extreme Value Analysis in Flash Memories for Dosimetry Applications

A commercial off-the-shelf flash memory is repurposed for use as a dosimeter. Target theory is used to derive fitting curves, and the curves are used to derive the extreme value distribution. This extreme value distribution predicts when the first failures will occur, allowing low doses to be measured. Pre-exposing the DUT to a known dose will reduce the free charge on the floating gate. Combining both methodologies can reduce the sensitivity of the DUT to any level desired.

[1]  B. Cho,et al.  Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions , 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

[2]  Adam R. Duncan,et al.  Impact of X-Ray Exposure on a Triple-Level-Cell NAND Flash , 2013, IEEE Transactions on Nuclear Science.

[3]  P. J. McNulty,et al.  Measurements of dose with individual FAMOS transistors , 1999 .

[4]  A. Scarpa,et al.  Charge loss after /sup 60/Co irradiation on flash arrays , 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[5]  E. Gumbel,et al.  Statistics of extremes , 1960 .

[6]  J F Fowler,et al.  The effect of multiple small doses of x rays on skin reactions in the mouse and a basic interpretation. , 1976, Radiation research.

[7]  Gabriella Ghidini,et al.  A model of radiation induced leakage current (RILC) in ultra-thin gate oxides , 1999 .

[8]  Leif Z. Scheick,et al.  First failure predictions for EPROMs of the type flown on the MPTB satellite , 2000 .

[9]  T. R. Oldham,et al.  Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory , 2012, IEEE Transactions on Nuclear Science.

[10]  Alessandro Paccagnella,et al.  Ionizing radiation induced leakage current on ultra-thin gate oxides , 1997 .

[11]  T. A. Dellin,et al.  Radiation response of floating gate EEPROM memory cells , 1989 .

[12]  P. J. McNulty,et al.  Dosimetry based on the erasure of floating gates in the natural radiation environments in space , 1998 .

[13]  R. Harboe-Sorensen,et al.  Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories , 2011, IEEE Transactions on Nuclear Science.

[14]  Alessandro Paccagnella,et al.  Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides , 1998 .