A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs

The velocity‐field characteristic for electrons in GaAs has been measured in the negative differential mobility region between 4.5 and 11 kV/cm by a new direct method involving probe measurements on the surface of a bulk GaAs two‐port amplifier. The measurements were taken on GaAs of resistivity in the 500–1000 Ω‐cm range.