Pattern shift response metrology
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[1] Boris Habets,et al. Advanced combined overlay and CD uniformity measurement mark for double patterning , 2018, Advanced Lithography.
[2] Chun Chi Yu,et al. Scatterometry or imaging overlay: a comparative study , 2015, Advanced Lithography.
[3] Gi-Sung Yeo,et al. Automatic in-situ focus monitor using line-shortening effect , 1999, Advanced Lithography.
[4] Christopher P. Ausschnitt,et al. Quantitative stepper metrology using the focus monitor test mask , 1994, Advanced Lithography.
[5] Wilhelm Maurer. Mask specifications for 193-nm lithography , 1996, Photomask Technology.
[6] Mark Wagner,et al. Accuracy in optical overlay metrology , 2016, SPIE Advanced Lithography.
[7] Henry J. L. Megens,et al. Latent image metrology for production wafer steppers , 1995, Advanced Lithography.
[8] David Ziger,et al. Understanding optical end of line metrology , 2000 .
[9] Wolfgang Osten. Optical metrology in the conflict between desire and reality , 2016, Optical Engineering + Applications.
[10] Christopher P. Ausschnitt,et al. Seeing the forest for the trees: a new approach to CD control , 1998, Advanced Lithography.
[11] Libin Zhang,et al. New alignment mark design structures for higher diffraction order wafer quality enhancement , 2017, Advanced Lithography.
[12] Chan Hwang,et al. A study of swing-curve physics in diffraction-based overlay , 2016, SPIE Advanced Lithography.
[13] Alok Vaid,et al. Advanced applications of scatterometry based optical metrology , 2017, Advanced Lithography.