Improvement of field‐effect transistor threshold voltage uniformity by using very low dislocation density liquid encapsulated Czochralski‐grown GaAs

Threshold voltage (Vth) uniformity in very low dislocation density liquid encapsulated Czochralski‐grown GaAs was investigated. A standard deviation (σVth) of 13 mV was realized for Vth from the center part of the etch pit free area on the wafer. No correlation was observed between Vth and the distance from a field‐effect transistor (FET) gate to its nearest neighbor etch pit. A σVth of 10 mV can be obtained by eliminating crystal dislocations and background fluctuations such as striations and also refining the FET fabrication process.