Photoemission study of sulfur and oxygen adsorption on GaN(0001)
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T. Moustakas | I. Friel | S. Bernardis | Yufeng Zhang | L. Plucinski | Shancai Wang | L. Colakerol | Kevin E Smith | Cian O'Donnell
[1] V. Bermudez. Theoretical study of hydrogen adsorption on the GaN(0001) surface , 2004 .
[2] Investigation of accumulated carrier mechanism on sulfurated GaN layers , 2003 .
[3] F. Litimein,et al. Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN , 2003 .
[4] E. Konenkova. Modification of GaAs(1 0 0) and GaN(0 0 0 1) surfaces by treatment in alcoholic sulfide solutions , 2002 .
[5] Ho Won Jang,et al. Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition , 2002 .
[6] T. Seong,et al. Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution , 2002 .
[7] P. Krüger,et al. Surface electronic structure of GaN()-(1×1): comparison between theory and experiment , 2002 .
[8] R. Ahuja,et al. Influence of Si doping on optical properties of wurtzite GaN , 2001 .
[9] Robert L. Johnson,et al. Photoemission studies on GaN(0 0 0 1) surfaces , 2001 .
[10] G. Hughes,et al. Core level photoemission studies of the sulphur terminated Ge(100) surface , 2001 .
[11] Sang‐Woo Kim,et al. Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN , 2001 .
[12] H. Hwang,et al. Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes , 2001 .
[13] T. Moustakas,et al. Surface Electronic Structure of p-type GaN(0001) , 2000 .
[14] G. Hughes,et al. Core-level photoemission studies of the sulphur-terminated Si(100) surface , 2000 .
[15] Y. Lin,et al. X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers , 2000 .
[16] G. Hughes,et al. The deposition of transition metal layers on sulphur-terminated InP(100) surfaces studies by core level photoemission spectroscopy , 2000 .
[17] In‐Hwan Lee,et al. Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution , 2000 .
[18] J. Long,et al. Chemisorption of H2O on GaN(0001) , 2000 .
[19] R. Davis,et al. Observation of highly dispersive surface states on GaN(0001)1×1 , 1999 .
[20] W. Schattke,et al. Valence-band photoemission from the GaN(0001) surface , 1999, cond-mat/9905245.
[21] N. V. Smith,et al. U5UA: A new high-resolution undulator beamline at the NSLS for spin-resolved photoemission speptroscopy , 1999 .
[22] K. Schwarz,et al. d-to-s bonding in GaN , 1998 .
[23] A. Wickenden,et al. The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation , 1998 .
[24] T. Moustakas,et al. Surface and bulk electronic structure of thin-film wurtzite GaN , 1997 .
[25] Dirk Vogel,et al. STRUCTURAL AND ELECTRONIC PROPERTIES OF GROUP-III NITRIDES , 1997 .
[26] Smith,et al. Electronic structure of GaN measured using soft-x-ray emission and absorption. , 1996, Physical review. B, Condensed matter.
[27] R. Nieminen,et al. Ab initio study of oxygen point defects in GaAs, GaN, and AlN. , 1996, Physical review. B, Condensed matter.
[28] Xiaohui Yu,et al. A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatment , 1996 .
[29] Victor M. Bermudez,et al. Study of oxygen chemisorption on the GaN(0001)‐(1×1) surface , 1996 .
[30] H. Metzner,et al. Thin CuInS2 films by three-source molecular beam deposition , 1995 .
[31] Hughes,et al. Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs(100) surface. , 1994, Physical review. B, Condensed matter.
[32] Hughes,et al. Sulfur-induced c(4 x 4) reconstruction of the Si(001) surface studied by scanning tunneling microscopy. , 1993, Physical review. B, Condensed matter.
[33] Theodore D. Moustakas,et al. Growth of GaN by ECR-assisted MBE , 1993 .