论文信息 - Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices - 字舞流文

Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices

Gaoqiang Deng | G. Du | Yuantao Zhang | Bao-lin Zhang | Zhen Huang | Baozhu Li | Baolin Zhang