Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm
暂无分享,去创建一个
[1] S. Takagi,et al. On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation , 1994 .
[2] T. Hiramoto,et al. Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs , 2005, IEEE Electron Device Letters.
[3] S. Takagi,et al. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .
[4] A. Toriumi,et al. Subband structure engineering for performance enhancement of Si MOSFETs , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[5] Dimitri A. Antoniadis,et al. SOI MOSFET effective channel mobility , 1994 .