Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm

This paper describes an experimental determination of the value of eta in ultra thin body (UTB) nMOSFET with SOI thickness ranging from 30 nm down to 5 nm. It is found experimentally for the first time that the eta value is larger than frac12 when SOI thickness is thinner than 12 nm. The meaning of eta value is discussed in terms of occupancy of the lowest subband of 2-fold-valley