论文信息 - Diffusion of zinc in gallium arsenide: A new model

Diffusion of zinc in gallium arsenide: A new model

Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank–Turnbull mechanism involving vacancies can be understood with a ’’kick‐out model’’ in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.

Ulrich Gösele | F. Morehead | U. Gösele | F. F. Morehead

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