Optical interference method for the approximate determination of refractive index and thickness of a transparent layer.

Optical interference fringe measurements of the thickness of transparent layers can be rapid, accurate, and nondestructive. If the refractive index n of the layer being measured is known, it may be combined directly with interference fringe information to yield the layer thickness t. If, however, n is unknown, the measurement procedure necessarily becomes more complicated. In this paper, a new and simpler optical interference method is presented for the approximate determination of both n and t of a transparent layer on a transparent substrate. The required experimental information is obtained from a single spectrophotometric recording of either the reflectance or transmittance of the layer and its substrate. The theory of the method is presented, and an application of the method to measurements of layers of SIPOS (Semi-Insulating POlycrystalline Silicon) is described. The method requires that the layer being measured must be uniformly deposited on a flat substrate, and it must neither absorb nor scatter the light passing through it. The major approximation inherent in the method is that both the layer and the substrate are assumed to be nondispersive over the wavelength region of interest.

[1]  K. Greenland Measurement and control of the thickness of thin films , 1952 .

[2]  E. Sparrow,et al.  Methods for Determining Film Thickness and Optical Constants of Films and Substrates , 1971 .

[3]  N. Harrick,et al.  Determination of refractive index and film thickness from interference fringes. , 1971, Applied optics.

[4]  Irving H. Malitson,et al.  Refraction and Dispersion of Synthetic Sapphire , 1962 .

[5]  M. E. Hills,et al.  Polarization in Cary model 14 spectrophotometers and its effect on transmittance measurements of anisotropic materials. , 1968, Applied optics.

[6]  W. A. Pliskin Nondestructive Optical Techniques for Thin-Film Thickness Measurements , 1969 .

[7]  F. Lukes̆,et al.  Another method for the determination of silicon oxide thickness , 1967 .

[8]  Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology , 1976 .

[9]  N. Goldsmith,et al.  Determination of silicon oxide thickness , 1966 .

[10]  F. Reizman,et al.  Optical thickness measurement of SiO2Si3N4 films on silicon , 1967 .

[11]  Calvin D. Salzberg,et al.  Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass , 1957 .

[12]  M. Kikuchi,et al.  Electronic properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) doped with oxygen atoms , 1977 .

[13]  H. B. Briggs Optical Effects in Bulk Silicon and Germanium , 1950 .

[14]  O. S. Heavens,et al.  Optical Properties of Thin Solid Films , 2011 .

[15]  D. E. Gray,et al.  American Institute of Physics Handbook , 1957 .

[16]  Irving Langmuir,et al.  Built-Up Films of Barium Stearate and Their Optical Properties , 1937 .

[17]  F. Reizman,et al.  Optical Thickness Measurement of Thin Transparent Films on Silicon , 1965 .

[18]  William A. Pliskin,et al.  Nondestructive Determination of Thickness and Refractive Index of Transparent Films , 1964, IBM J. Res. Dev..

[19]  Thickness measurement of silicon dioxide layers by ultraviolet-visible interference method , 1964 .

[20]  T. Aoki,et al.  Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated Circuits , 1975 .

[21]  Non-destructive measurement of glass on silicon dioxide through near-infrared (NIR) interference , 1966 .

[22]  A VAMFO-CARIS method for determining thickness of transparent films with small number of interference extrema , 1971 .