论文信息 - Analysis and Design of Sub-Threshold R-MOSFET Tunable Resistor

Analysis and Design of Sub-Threshold R-MOSFET Tunable Resistor

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with discussion on design implication and consideration. Experiments and simulations are provided to validate the theoretical analysis and design, and to verify the feasibility at a supply voltage as low as 0.5V using a low-threshold devices in a 1.8-V 0.18µm CMOS process.

Apisak Worapishet | Phanumas Khumsat

[1] John M. Khoury,et al. Continuous-time MOSFET-C filters in VLSI , 1986 .

[2] P. Kinget,et al. 0.5-V analog circuit techniques and their application in OTA and filter design , 2005, IEEE Journal of Solid-State Circuits.

[3] Un-Ku Moon,et al. Design of a low-distortion 22-kHz fifth-order Bessel filter , 1993 .

[4] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .

[5] Apisak Worapishet,et al. Sub-threshold R-MOSFET tunable resistor technique , 2007 .

[6] Yannis Tsividis,et al. Detailed analysis of nonidealities in MOS fully integrated active RC filters based on balanced netwo , 1984 .

[7] P.K. Hanumolu,et al. A 0.8-V accurately tuned linear continuous-time filter , 2005, IEEE Journal of Solid-State Circuits.