论文信息 - Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

The behavior of unipolar resistance switching in NiO thin film was investigated. The switching current and the switching voltage alone did not follow statistical distribution. Instead, it was observed that product of switching current and switching voltage; namely, switching power follows Poisson’s distribution. An electrical manipulation—pulse train, for example—was suggested in order to minimize switching failure based on the above Poisson’s distribution behavior.

[1] Young-soo Park,et al. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .

[2] S. H. Jeon,et al. A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories , 2007 .

[3] B. Delley,et al. Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory , 2007, 0707.0563.

[4] K. Kinoshita,et al. Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model , 2007 .

[5] H. Akinaga,et al. Resistance switching in the metal deficient-type oxides: NiO and CoO , 2007 .

[6] Cheol Seong Hwang,et al. Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films , 2007 .

[7] Byung Joon Choi,et al. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[8] C. Gerber,et al. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[9] Jiyoung Kim,et al. Random and localized resistive switching observation in Pt/NiO/Pt , 2007 .

[10] S. Seo,et al. Reproducible resistance switching in polycrystalline NiO films , 2004 .

[11] K. Kinoshita,et al. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide , 2006 .