论文信息 - Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Random threshold voltage (VM) fluctuation data obtained from multiple fabs, generations and technologies, as well as theoretical / TCAD results are carefully compared using a special normalization method. It is revealed that P-FET fluctuation can be almost fully accounted for by dopant fluctuation regardless of device generations and designs, whereas extra fluctuation mechanism(s) significantly contributes to N-FETs.

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