p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.

[1]  Y. Lin,et al.  Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN , 2005 .

[2]  E. Ozbay,et al.  Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications , 2006 .

[3]  Suzuki,et al.  First-principles calculations of effective-mass parameters of AlN and GaN. , 1995, Physical review. B, Condensed matter.

[4]  B. Holländer,et al.  Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers , 2013, Journal of Electronic Materials.

[5]  Holger Kalisch,et al.  Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance , 2011 .

[6]  A. Vescan,et al.  Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of +0.5 V , 2012, 70th Device Research Conference.

[7]  Xiang Gao,et al.  InAlN/GaN HEMTs With AlGaN Back Barriers , 2011, IEEE Electron Device Letters.

[8]  A. Vescan,et al.  Processing and characterization of recessed-gate AlGaN/GaN HFETs , 2008, 2008 International Conference on Advanced Semiconductor Devices and Microsystems.

[9]  T. Palacios,et al.  Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs , 2008, IEEE Electron Device Letters.

[10]  R. Chau.  Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004 .

[11]  M. B. Das,et al.  Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped fet structures using carrier saturation velocity/charge-control model , 1985 .

[12]  Xiang Gao,et al.  InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz , 2012, IEEE Electron Device Letters.

[13]  E. Ozbay,et al.  Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition , 2008 .

[14]  G. Simin,et al.  GaN/AlGaN p-channel inverted heterostructure JFET , 2002, IEEE Electron Device Letters.

[15]  O. Ambacher,et al.  First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET , 2012 .

[16]  J. Baek,et al.  Doping selective lateral electrochemical etching of GaN for chemical lift-off , 2009 .

[17]  R. H. Jansen,et al.  Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates , 2010 .

[18]  A. Schmitz,et al.  Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency , 2011, 2011 International Electron Devices Meeting.

[19]  Patrick Fay,et al.  245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment , 2011, IEEE Electron Device Letters.

[20]  P. Parikh,et al.  40-W/mm Double Field-plated GaN HEMTs , 2006, 2006 64th Device Research Conference.

[21]  J. Kwak,et al.  Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to p-GaN , 2002 .

[22]  M. Van Hove,et al.  Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4 , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[23]  Yong Cai,et al.  Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using$hboxCF_4$Plasma Treatment , 2006, IEEE Transactions on Electron Devices.

[24]  P. Ye,et al.  High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm , 2008, IEEE Electron Device Letters.

[25]  D. Jena,et al.  Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic , 2012, 70th Device Research Conference.

[26]  Michael S. Shur,et al.  Accumulation Hole Layer in p-GaN/AlGaN Heterostructures , 2000 .

[27]  E. M. Sankara Narayanan,et al.  High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface , 2010 .

[28]  Adele E. Schmitz,et al.  GaN enhancement/depletion-mode FET logic for mixed signal applications , 2005 .

[29]  Dong Seup Lee,et al.  300-GHz InAlN/GaN HEMTs With InGaN Back Barrier , 2011, IEEE Electron Device Letters.

[30]  E. Kohn,et al.  P-channel InGaN-HFET structure based on polarization doping , 2004, IEEE Electron Device Letters.

[31]  A. Vescan,et al.  AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal , 2013 .

[32]  Fu-Rong Chen,et al.  Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films , 1999 .

[33]  Joan M. Redwing,et al.  AlGaN/GaN HEMTs grown on SiC substrates , 1997 .