The Local Structure of Amorphous Silicon

Paracrystalline Amorphous silicon has traditionally been represented by a continuous random network model in which there is no long-range ordering for the atoms, and some have less than fourfold coordination, which form dangling bonds—a type of defect. Treacy and Borisenko (p. 950; see the Perspective by Gibson) used fluctuation electron microscopy to explain that models including regions of crystalline order are needed to fit the observed local variations in structure. Thus, on the 1- to 2-nanometer-length scale, this material should be thought of as having a paracrystalline structure containing localized crystalline regions. Amorphous silicon is more accurately described by a paracrystalline model, not the idealized continuous random network. It is widely believed that the continuous random network (CRN) model represents the structural topology of amorphous silicon. The key evidence is that the model can reproduce well experimental reduced density functions (RDFs) obtained by diffraction. By using a combination of electron diffraction and fluctuation electron microscopy (FEM) variance data as experimental constraints in a structural relaxation procedure, we show that the CRN is not unique in matching the experimental RDF. We find that inhomogeneous paracrystalline structures containing local cubic ordering at the 10 to 20 angstrom length scale are also fully consistent with the RDF data. Crucially, they also matched the FEM variance data, unlike the CRN model. The paracrystalline model has implications for understanding phase transformation processes in various materials that extend beyond amorphous silicon.

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