A technique for fabricating transparent waveguides on the same wafer as a quantum well (QW) DBR laser array has been developed. High [MeV] energy ion implantation is used to create a large number of vacancies and interstitials throughout the active region of the device. Upon annealing, these entities enhance the intermixing of the QW and barrier materials resulting in a blue shift of the QW bandgap. Energy shifts (measured using low temperature photoluminescence spectroscopy) of greater than 60 meV can be achieved. Room temperature waveguide absorption measurements verify the shift in the bandgap energy and confirm that the waveguide is now effectively transparent in the wavelength range of the QW lasers. This technique is being used in an eight wavelength WDM transmitter array in which the waveguiding region is selectively implanted and blue shifted.