Nonvolatile memory device composing one switching device and one resistant material and method of manufacturing the same

PURPOSE: A non-volatile memory device including one switching device and one resistor and a method for manufacturing the same are provided to increase the yields of the products by utilizing the easily fabricated transition metal oxide as a resistor. CONSTITUTION: A non-volatile memory device including one switching device and one resistor includes a substrate, a transistor(Tr) and a data storage unit. The transistor is formed on the substrate. The data storage unit is connected to the drain(44) of the transistor. And, the data storage unit is provided with another data storage material layer having a resistance characteristics different from that of a predetermined voltage range.