AlGaAs OEIC transmitters

The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.

[1]  I. Hayashi,et al.  JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE , 1970 .

[2]  H. Sunak.  Optical fiber communications , 1985, Proceedings of the IEEE.

[3]  Integrated quantum-well-laser transmitter compatible with ion-implanted GaAs integrated circuits , 1984 .

[4]  W. Dumke,et al.  STIMULATED EMISSION OF RADIATION FROM GaAs p‐n JUNCTIONS , 1962 .

[5]  S. Sasaki,et al.  GaAs optoelectronic integrated light sources , 1983 .

[6]  W. Filensky,et al.  The GaAs MESFET as a Pulse Regenerator, Amplifier and Laser Modulator in the Gbit/s Range , 1976, ESSCIRC 76: 2nd European Solid State Circuits Conference.

[7]  H Matsueda,et al.  Monolithic integration of a laser diode, photo monitor, and electric circuits on a semi-insulating GaAs substrate. , 1984, Applied optics.

[8]  Naoki Chinone,et al.  High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers , 1985 .

[9]  R. Petschacher,et al.  Electronic Circuits for High Bit Rate Digital Fiber Optic Communication Systems , 1978, IEEE Trans. Commun..

[10]  D. Kasemset,et al.  GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications , 1984, IEEE Electron Device Letters.

[11]  Kam Y. Lau,et al.  Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit , 1982 .

[12]  S. Somekh,et al.  FIBER OPTICS COMMUNICATIONS , 1972 .

[13]  N. Bar-chaim,et al.  Solid state: Integrated optoelectronics: The marriage of lasers, detectors, and transistors in a single monolithic package promises fact, reliable data transmission , 1982, IEEE Spectrum.

[14]  C. Burrus,et al.  Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device , 1984 .

[15]  S. Forrest,et al.  Monolithic optoelectronic integration: A new component technology for lightwave communications , 1985, Journal of Lightwave Technology.

[16]  Tadashi Fukuzawa,et al.  Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor , 1980 .

[17]  H. Matsueda,et al.  An optoelectronic integrated device including a laser and its driving circuit , 1984 .

[18]  T. H. Windhorn,et al.  Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate , 1985 .

[19]  Amnon Yariv,et al.  Monolithic integration of an injection laser and a metal semiconductor field effect transistor , 1979 .

[20]  W. Wiegmann,et al.  131 ps optical modulation in semiconductor multiple quantum wells (MQW's) , 1985, IEEE Journal of Quantum Electronics.

[21]  H. Beneking.  Full solid state image converter based on integration of phototransistors and LEDs , 1981, IEEE Electron Device Letters.

[22]  C. Hong,et al.  IVA-8 GaAlAs/GaAs integrated optoelectronic transmitter using selective MOCVD epitaxy and planar ion implantation , 1983, IEEE Transactions on Electron Devices.

[23]  W. Wiegmann,et al.  Room‐temperature excitonic optical bistability in a GaAs‐GaAlAs superlattice étalon , 1982 .

[24]  N. Bar-chaim,et al.  GaAs integrated optoelectronics , 1982, IEEE Transactions on Electron Devices.

[25]  S. Matsushita,et al.  Fiber-optic devices for local area network application , 1985 .

[26]  Yasuhiko Arakawa,et al.  Quantum noise and dynamics in quantum well and quantum wire lasers , 1984 .

[27]  R. Shubert,et al.  Optical Surface Waves on Thin Films and Their Application to Integrated Data Processors , 1968 .

[28]  J. E. Goell,et al.  A 274-Mb/s optical-repeater experiment employing a GaAs laser , 1973 .

[29]  Ammon Yariv.  Active Integrated Optics. , 1971 .

[30]  A. Yariv,et al.  Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate , 1978 .

[31]  S. Yamashita,et al.  Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semi-insulating GaAs , 1986 .

[32]  W. E. Krag,et al.  SEMICONDUCTOR MASER OF GaAs , 1962 .

[33]  Stewart E. Miller,et al.  Integrated optics: An introduction , 1969 .

[34]  Michiharu Nakamura,et al.  Integration of a laser diode and a twin FET , 1980 .

[35]  Kenichi Iga,et al.  GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser , 1987 .

[36]  M. Umeno,et al.  MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers , 1984 .

[37]  Osamu Wada,et al.  Recent progress in optoelectric integrated circuits (OEIC's) , 1986 .

[38]  D. J. Pope,et al.  Microwave Circuit Models of Semiconductor Injection Lasers , 1982 .

[39]  F. Kapron,et al.  RADIATION LOSSES IN GLASS OPTICAL WAVEGUIDES , 1970 .

[40]  Chin B. Su,et al.  Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers , 1984 .

[41]  J. D. Kingsley,et al.  Coherent Light Emission From GaAs Junctions , 1962 .

[42]  A. Yariv,et al.  The beginning of integrated optoelectronic circuits , 1984, IEEE Transactions on Electron Devices.

[43]  H. Beneking,et al.  Monolithic GaAlAs/GaAs infrared-to-visible wavelength converter with optical power amplification , 1981, IEEE Transactions on Electron Devices.

[44]  R. B. Lauer,et al.  12.5‐GHz direct modulation bandwidth of vapor phase regrown 1.3‐μm InGaAsP buried heterostructure lasers , 1985 .

[45]  John E. Bowers,et al.  High-frequency constricted mesa lasers , 1985 .

[46]  Osamu Wada,et al.  Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate , 1985 .

[47]  A. Yariv,et al.  Ultra-high speed semiconductor lasers , 1985 .

[48]  Joseph M. Ballantyne,et al.  Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors , 1986 .

[49]  Kam Y. Lau,et al.  Direct amplitude modulation of short‐cavity GaAs lasers up to X‐band frequencies , 1983 .

[50]  F.J. Leonberger,et al.  Optical interconnections for VLSI systems , 1984, Proceedings of the IEEE.

[51]  Akio Sasaki,et al.  InGaAsP–InP Heterojunction Phototransistors and Light Amplifiers , 1981 .