HBT Modeling

III-V heterojunction bipolar transistors (HBTs) enjoy several advantages over their conventional silicon cousins. These include: (1) a thinner base and lower base resistance which yields higher gain and fmax; (2) high breakdown voltage; (3) low parasitics; (4) high power density. The combination of a thin base (higher fT), low base resistance (higher fmax), and low parasitics in particular make HBTs a suitable choice for high- frequency applications.

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