Morphology and phase stability of TiSi2 on Si

The formation mechanisms and properties of TiSi2 on Si are investigated. The particular emphasis is in relating the nucleation, morphology, and phase stability of the films. TiSi2 films were prepared by deposition of Ti on atomically clean silicon substrates in ultrahigh vacuum. The silicide formation was initiated either by in situ annealing or deposition onto heated substrates. The island formation of TiSi2 and surface and interface morphologies of TiSi2 were examined by scanning electron microscopy and transmission electron microscopy. The TiSi2 formation process was monitored with in situ Auger electron spectroscopy and low‐energy electron diffraction to analyze the surface concentration and the surface structures, respectively. Raman spectroscopy was used for phase identification of the TiSi2. Titanium film thicknesses from 50 to 400 A were examined. For all thicknesses studied, the C49 TiSi2 phase is observed to nucleate. Immediately after low‐temperature deposition, the interface morphology was smo...

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