论文信息 - Analytical Modeling of Ge and Si Double-Gate(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance

Analytical Modeling of Ge and Si Double-Gate(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance

In this paper, we present a self-consistent, analytical model that includes carrier quantization; short channel effects (SCE) and calculates the ballistic currents in DGFETs. We use this new tool to compare the effect of SCE and process induced variations (PIV) on Silicon (Si) and Germanium (Ge) NMOS DGFETs. Our results show that in the case of DGFETs designed to meet the ITRS High Performance (HP) requirements, even with PIV, Ge performs better than Si. Whereas, due to its poorer SCE, in the case of DGFET designed to meet the ITRS Low Standby Power (LSTP) requirements, Ge performs worse than Si.

Krishna C. Saraswat | Ken Uchida | Tejas Krishnamohan | Abhijit Pethe

[1] Risto M. Nieminen,et al. Electronic Properties of Two-Dimensional Systems , 1988 .

[2] M. Lundstrom,et al. Essential physics of carrier transport in nanoscale MOSFETs , 2002 .

[3] Ching-Te Chuang,et al. Physical compact model for threshold voltage in short-channel double-gate devices , 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

[4] D. Kwong,et al. Investigation of performance limits of germanium double-gated MOSFETs , 2003, IEEE International Electron Devices Meeting 2003.

[5] Qiang Chen,et al. A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs , 2002 .

[6] K. Natori. Ballistic metal-oxide-semiconductor field effect transistor , 1994 .

[7] J. G. Fossum,et al. Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs , 2002 .

[8] S. Takagi,et al. Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).