Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

[1]  Hongxing Jiang,et al.  Hexagonal boron nitride for deep ultraviolet photonic devices , 2014 .

[2]  R. Dupuis,et al.  Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition , 2008 .

[3]  K. B. Nam,et al.  Unique optical properties of AlGaN alloys and related ultraviolet emitters , 2004 .

[4]  Suhuai Wei,et al.  Band structure and fundamental optical transitions in wurtzite AlN , 2003 .

[5]  S. Lebègue,et al.  Arnaud, Lebègue, Rabiller, and Alouani Reply , 2008 .

[6]  Jing Li,et al.  Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers , 2014 .

[7]  M. Asif Khan,et al.  Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates , 1992 .

[8]  Jing Li,et al.  Mg acceptor level in AlN probed by deep ultraviolet photoluminescence , 2003 .

[9]  W. Orellana,et al.  Stability of native defects in hexagonal and cubic boron nitride , 2001 .

[10]  Jing Li,et al.  Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products , 2015 .

[11]  Rajendra Dahal,et al.  Band-edge transitions in hexagonal boron nitride epilayers , 2012 .

[12]  S. Kamiyama,et al.  Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates , 2008 .

[13]  Shuji Nakamura,et al.  The blue laser diode-the complete story , 2000 .

[14]  Wenjun Zhang,et al.  Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films , 2014 .

[15]  Cohen,et al.  Theory of graphitic boron nitride nanotubes. , 1994, Physical review. B, Condensed matter.

[16]  A. Zunger,et al.  Point defects in hexagonal boron nitride. II. Theoretical studies , 1975 .

[17]  Jing Li,et al.  The origin of deep-level impurity transitions in hexagonal boron nitride , 2015 .

[18]  Jing Li,et al.  Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors , 2016 .

[19]  N. Peres,et al.  Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures , 2011, Science.

[20]  Huge excitonic effects in layered hexagonal boron nitride. , 2005, Physical review letters.

[21]  J. Lin,et al.  Hexagonal boron nitride and 6H-SiC heterostructures , 2013 .

[22]  Toshiki Makimoto,et al.  Hexagonal boron nitride grown by MOVPE , 2008 .

[23]  Hongxing Jiang,et al.  Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers , 2003 .

[24]  J. Lin,et al.  Origin of the significantly enhanced optical transitions in layered boron nitride , 2012 .

[25]  Kenji Watanabe,et al.  Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal , 2009 .

[26]  H. Mizuseki,et al.  First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer , 2012 .

[27]  Harry G. Drickamer,et al.  Effect of High Pressure on the Lattice Parameters of Diamond, Graphite, and Hexagonal Boron Nitride , 1966 .

[28]  J. Lin,et al.  Electrical transport properties of Si-doped hexagonal boron nitride epilayers , 2013 .

[29]  F. Ducastelle,et al.  Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements , 2007 .

[30]  Hongxing Jiang,et al.  The origins of near band-edge transitions in hexagonal boron nitride epilayers , 2016 .

[31]  Mim Lal Nakarmi,et al.  Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys , 2005 .

[32]  Christian Kisielowski,et al.  Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy , 2009 .

[33]  Steven G. Louie,et al.  Boron Nitride Nanotubes , 1995, Science.

[34]  Takashi Taniguchi,et al.  Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal , 2004, Nature materials.

[35]  Jun Lou,et al.  Large scale growth and characterization of atomic hexagonal boron nitride layers. , 2010, Nano letters.

[36]  L. Wirtz,et al.  Coupling of excitons and defect states in boron-nitride nanostructures , 2011, 1103.2628.

[37]  David W. Weyburne,et al.  Correlation between optoelectronic and structural properties and epilayer thickness of AlN , 2007 .

[38]  Hongxing Jiang,et al.  Two-dimensional excitons in three-dimensional hexagonal boron nitride , 2013 .

[39]  G. Kresse,et al.  Comment on "huge excitonic effects in layered hexagonal boron nitride". , 2008, Physical review letters.

[40]  Neeraj Nepal,et al.  Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys , 2009 .

[41]  Neeraj Nepal,et al.  Growth and photoluminescence studies of Zn-doped AlN epilayers , 2006 .

[42]  M. Fanciulli,et al.  Study of defects in wide band gap semiconductors by electron paramagnetic resonance , 1993 .

[43]  P. Perry,et al.  The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process , 1978 .

[44]  M. Dvorak,et al.  Origin of the variation of exciton binding energy in semiconductors. , 2013, Physical review letters.

[45]  O. Osberghaus,et al.  ISOTOPE ABUNDANCES OF BORON A MASS-SPECTROMETRIC INVESTIGATION OF PRODUCTS OBTAINED FROM BF$sub 3$ AND BCl$sub 3$ THROUGH BOMBARDMENT WITH ELECTRONS , 1950 .

[46]  Annick Loiseau,et al.  Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy , 2007, 0707.0599.

[47]  Takashi Sugino,et al.  Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition , 1997 .

[48]  G. Knoll Radiation detection and measurement , 1979 .

[49]  K. H. Kim,et al.  III-nitride blue and ultraviolet photonic crystal light emitting diodes , 2004 .

[50]  A. Kanaev,et al.  Near band-gap photoluminescence properties of hexagonal boron nitride , 2008, 0804.2760.

[51]  Hongxing Jiang,et al.  Realization of highly efficient hexagonal boron nitride neutron detectors , 2016 .

[52]  A. Henry,et al.  Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates , 2014 .

[53]  Bing Huang,et al.  Defect and impurity properties of hexagonal boron nitride: A first-principles calculation , 2012 .

[54]  S. Landsberger,et al.  Measurement and detection of radiation , 1983 .

[55]  Kenji Watanabe,et al.  Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure , 2007, Science.

[56]  L. Wirtz,et al.  Excitons in boron nitride nanotubes: dimensionality effects. , 2005, Physical review letters.

[57]  Defect states of complexes involving a vacancy on the boron site in boronitrene , 2011 .

[58]  Neeraj Nepal,et al.  Correlation between optical and electrical properties of Mg-doped AlN epilayers , 2006 .

[59]  K. Shepard,et al.  Graphene based heterostructures , 2012 .

[60]  Rajendra Dahal,et al.  Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material , 2011 .

[61]  Defect-related photoluminescence of hexagonal boron nitride , 2008, 0810.3989.

[62]  SUPARNA DUTTASINHA,et al.  Van der Waals heterostructures , 2013, Nature.

[63]  Hideo Kawanishi,et al.  Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers , 2006 .

[64]  Rajendra Dahal,et al.  Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics , 2012 .

[65]  K. Shepard,et al.  Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.

[66]  Josef Uher,et al.  Efficiency of composite boron nitride neutron detectors in comparison with helium-3 detectors , 2007 .

[67]  R. S. Pease An X‐ray study of boron nitride , 1952 .

[68]  E. Haller,et al.  Raman spectroscopy and time-resolved photoluminescence of BN and BxCyNz nanotubes , 2004 .

[69]  N. Peres,et al.  Fine Structure Constant Defines Visual Transparency of Graphene , 2008, Science.

[70]  Rajendra Dahal,et al.  Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers , 2012 .

[71]  C. Chen,et al.  Band-edge exciton states in AlN single crystals and epitaxial layers , 2004 .

[72]  F. Ducastelle,et al.  Exciton optical transitions in a hexagonal boron nitride single crystal , 2011 .