Dynamic sheath model at pulsed-biased insulating substrates

Characteristics of collisionless pulse-biased sheaths are studied with a one-dimensional fluid model coupled up to an equivalent circuit model. All the time-dependent terms are included in the ion fluid equations to ensure that the model can describe the sheath dynamics over a wide range of pulse frequency, especially in the intermediate pulse frequency range. The equivalent circuit model gives the instantaneous relationship between the sheath thickness and the surface potential at an insulating substrate placed on the pulse-biased electrode. The spatiotemporal variations of the potential, ion density and electron density inside the sheath are shown numerically. Additionally, the ion energy distributions arriving at insulating substrates and the charge density accumulated on insulating substrates are calculated with the model. It is shown that some parameters such as the pulse frequency, pulse duty ratio, and amplitude of the pulse voltage applied on the electrodes play an important role not only in deter...

[1]  You-nian Wang,et al.  Spatiotemporal characteristics of the collisionless rf sheath and the ion energy distributions arriving at rf-biased electrodes. , 2002, Physical review. E, Statistical, nonlinear, and soft matter physics.

[2]  Xiuheng Wang,et al.  Improve retained dose and impact energy of inner surface plasma immersion ion implantation using long pulse duration with deflecting electric field , 2002 .

[3]  T. Lu,et al.  Transient charging effects on insulating surfaces exposed to a plasma during pulse biased dc magnetron sputtering , 2001 .

[4]  T. Lu,et al.  Pulse bias sputtering of copper onto insulating surfaces , 2001 .

[5]  K. Yukimura,et al.  Ion current analysis in pulsed RF plasma as a fundamental research of plasma-based ion implantation , 2001 .

[6]  Gon-Ho Kim,et al.  Measurement of sheath expansion in plasma source ion implantation , 2001 .

[7]  James W. Bradley,et al.  Time-resolved Langmuir probe measurements at the substrate position in a pulsed mid-frequency DC magnetron plasma , 2001 .

[8]  S. Qi,et al.  Effect of pulse waveform on plasma sheath expansion in plasma-based ion implantation , 2000 .

[9]  D. J. Economou,et al.  Spatio-temporal evolution of a pulsed chlorine discharge , 2000 .

[10]  S. Mändl,et al.  Plasma immersion ion implantation using titanium and oxygen ions , 2000 .

[11]  K. Yukimura,et al.  Model for ion extraction from pulsed plasma source for plasma based ion implantation (PBII) , 2000 .

[12]  T. Lu,et al.  Pulsed bias magnetron sputtering of thin films on insulators , 1999 .

[13]  E. Aydil,et al.  Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparison to experimental measurements , 1999 .

[14]  M. Lieberman,et al.  Ion energy distributions in rf sheaths; review, analysis and simulation , 1999 .

[15]  Ulrich Rüde,et al.  TWO-DIMENSIONAL SIMULATION OF PLASMA-BASED ION IMPLANTATION , 1999 .

[16]  K. Yukimura,et al.  Titanium nitride coating on implanted layer using titanium plasma based ion implantation , 1999 .

[17]  S. Qin,et al.  Dynamic sheath model of collisionless multispecies plasma immersion ion implantation , 1995 .

[18]  K. Riemann.  The validity of Bohm's sheath criterion in rf discharges , 1992 .

[19]  M. Lieberman,et al.  Model of plasma immersion ion implantation for voltage pulses with finite rise and fall times , 1991 .

[20]  Michael A. Lieberman,et al.  Model of plasma immersion ion implantation , 1989 .