Semiconductor memory device having pre-emphasis signal generator
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A semiconductor memory device comprising a pre-emphasis signal generator is provided to assure timing margin by efficiently removing noise due to the generation of reflection. A main output driver(10) outputs a data signal through an output stage. A subsidiary output driver(20) is connected to the output stage, and performs a pre-emphasis operation. A pre-emphasis signal generator(30) outputs at least one pre-emphasis signal to the subsidiary output driver in order to drive the subsidiary output driver. In the pre-emphasis signal generator, a first auto-pulse generator(31) generates a first auto-pulse in response to the transition of a first control signal. A first delay circuit(32) receives the first auto-pulse, and outputs a first pre-emphasis signal by delaying the first auto-pulse. A delay control part(35) controls the delay rate of the first delay circuit by applying a delay control signal to the first delay circuit.