Nonvolatile memory devices based on self-assembled nanocrystals
暂无分享,去创建一个
[1] Chuanbin Mao,et al. Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication , 2007, IEEE Transactions on Electron Devices.
[2] Jang‐Sik Lee,et al. Organic Field-Effect Transistor-Based Nonvolatile Memory Devices Having Controlled Metallic Nanoparticle/Polymer Composite Layers , 2010 .
[3] Roberto Bez,et al. Introduction to flash memory , 2003, Proc. IEEE.
[4] T. Fuyuki,et al. Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein , 2006 .
[5] Pascal Normand,et al. Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis , 2002 .
[6] F. Caruso,et al. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. , 2007, Nature nanotechnology.
[7] Soon-Ki Kwon,et al. High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors , 2010 .
[8] Ki-Bum Kim,et al. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications , 2006 .
[9] Se-Ho Lee,et al. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory. , 2007, Nature nanotechnology.
[10] J. De Blauwe,et al. Nanocrystal nonvolatile memory devices , 2002 .
[11] Piero Olivo,et al. Flash memory cells-an overview , 1997, Proc. IEEE.
[12] G. Pei,et al. Metal nanocrystal memories. I. Device design and fabrication , 2002 .
[13] D. Tsoukalas,et al. Recent advances in nanoparticle memories , 2005 .
[14] Z. Yu,et al. Single electron charging in Si nanocrystals embedded in silicon-rich oxide , 2003 .
[15] L. Perniola,et al. Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.
[16] Jang‐Sik Lee. Recent progress in gold nanoparticle-based non-volatile memory devices , 2010 .
[17] Sang Yeol Lee,et al. Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs , 2010, IEEE Electron Device Letters.
[18] Sandip Tiwari,et al. Fast and long retention-time nano-crystal memory , 1996 .
[19] S. Straub,et al. Silicon nanocrystal based memory devices for NVM and DRAM applications , 2004 .
[20] B. Garrido,et al. Control of tunnel oxide thickness in Si-nanocrystal array memories obtained by ion implantation and its impact in writing speed and volatility , 2003 .
[21] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[22] B. Pécz,et al. Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals , 2007 .
[23] C. Yoon,et al. Formation of gold nanoparticles embedded in a polyimide film for nanofloating gate memory , 2007 .
[24] Wei Lin Leong,et al. Charging phenomena in pentacene-gold nanoparticle memory device , 2007 .
[25] Jyun-Yi Wu,et al. Bandgap engineering of tunnel oxide with multistacked layers of Al2O3/HfO2/SiO2 for Au-nanocrystal memory application , 2008 .
[26] Sungnam Chang,et al. Floating gate technology for high performance 8-level 3-bit NAND flash memory , 2009, ESSDERC 2009.
[27] Jaegab Lee,et al. Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer , 2009 .
[28] Jang-Sik Lee,et al. Flexible organic transistor memory devices. , 2010, Nano letters.
[29] Sungho Kim,et al. Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application , 2009 .
[30] Soo Jin Kim,et al. Transparent organic thin-film transistors and nonvolatile memory devices fabricated on flexible plastic substrates , 2011 .
[31] Thierry Baron,et al. Growth of Si nanocrystals on alumina and integration in memory devices , 2003 .
[32] Soo-Jin Kim,et al. Organic-Transistor-Based Nano-Floating-Gate Memory Devices Having Multistack Charge-Trapping Layers , 2010, IEEE Electron Device Letters.
[33] Jang-Sik Lee,et al. Progress in non-volatile memory devices based on nanostructured materials and nanofabrication , 2011 .
[34] Jaegab Lee,et al. Nonvolatile nanocrystal charge trap flash memory devices using a micellar route to ordered arrays of cobalt nanocrystals , 2007 .
[35] Carla Golla,et al. Flash Memories , 1999 .
[36] Soo-Jin Kim,et al. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers , 2010 .
[37] S. Lee,et al. Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition , 2011 .
[38] Kinam Kim,et al. Memory technology in the future , 2007 .
[39] Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films , 2002, cond-mat/0208137.
[40] Su-Ting Han,et al. Microcontact Printing of Ultrahigh Density Gold Nanoparticle Monolayer for Flexible Flash Memories , 2012, Advanced materials.
[41] Jae Sung Sim,et al. Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons , 2011, Advanced materials.
[42] Jang‐Sik Lee,et al. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices , 2008 .
[43] Jang‐Sik Lee. Review paper: Nano-floating gate memory devices , 2011 .
[44] Ananth Dodabalapur,et al. Non‐Volatile Organic Memory Applications Enabled by In Situ Synthesis of Gold Nanoparticles in a Self‐Assembled Block Copolymer , 2008 .
[45] Nripan Mathews,et al. Towards printable organic thin film transistor based flash memory devices , 2011 .
[46] H. Hwang,et al. Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory , 2007 .
[47] Su‐Ting Han,et al. Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate) , 2012, Nanotechnology.
[48] A. G. Nassiopoulou,et al. Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing , 2003 .
[49] Yi Su,et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric , 2006, IEEE Transactions on Nanotechnology.
[50] Jaegab Lee,et al. Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications , 2009 .
[51] M. Kovalenko,et al. Prospects of colloidal nanocrystals for electronic and optoelectronic applications. , 2010, Chemical reviews.
[52] Pascal Normand,et al. Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing , 2000 .
[53] Wei Lin Leong,et al. Solution processed non-volatile top-gate polymer field-effect transistors , 2011 .
[54] Panagiotis Dimitrakis,et al. Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation , 2004 .
[55] Ya-Chin King,et al. A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide , 1999 .
[56] H. Hamann,et al. Ultra-high-density phase-change storage and memory , 2006, Nature materials.
[57] Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition , 2006 .
[58] Edwin C. Kan,et al. Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications , 2005 .