Nonvolatile memory devices based on self-assembled nanocrystals

Abstract Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such as laptop computers, tablet devices, smart phones, etc. Among the many available nonvolatile memory devices, flash memory devices are of great interest to the electronics industry owing to their simple device structure, enabling high-density memory applications. Flash memory devices in which nanoparticles or nanocrystals are used as the charge-trapping elements have advantages over conventional flash memory devices because the charge-trapping layer and memory performance of the former can be readily optimized. Active research has recently been conducted to fabricate and characterize self-assembled-nanocrystal-based nonvolatile memory devices. We reviewed various strategies for fabricating nanocrystal-based nonvolatile memory devices and discussed the programmable memory properties and the device reliability characteristics of nanocrystal-based memory devices to possibly apply nanocrystal-based memory devices to those used in portable/mobile electronic devices. Finally, novel device applications such as printed/flexible/transparent electronic devices were explored based on nanocrystal-based memory devices.

[1]  Chuanbin Mao,et al.  Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication , 2007, IEEE Transactions on Electron Devices.

[2]  Jang‐Sik Lee,et al.  Organic Field-Effect Transistor-Based Nonvolatile Memory Devices Having Controlled Metallic Nanoparticle/Polymer Composite Layers , 2010 .

[3]  Roberto Bez,et al.  Introduction to flash memory , 2003, Proc. IEEE.

[4]  T. Fuyuki,et al.  Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein , 2006 .

[5]  Pascal Normand,et al.  Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis , 2002 .

[6]  F. Caruso,et al.  Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. , 2007, Nature nanotechnology.

[7]  Soon-Ki Kwon,et al.  High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors , 2010 .

[8]  Ki-Bum Kim,et al.  Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications , 2006 .

[9]  Se-Ho Lee,et al.  Highly scalable non-volatile and ultra-low-power phase-change nanowire memory. , 2007, Nature nanotechnology.

[10]  J. De Blauwe,et al.  Nanocrystal nonvolatile memory devices , 2002 .

[11]  Piero Olivo,et al.  Flash memory cells-an overview , 1997, Proc. IEEE.

[12]  G. Pei,et al.  Metal nanocrystal memories. I. Device design and fabrication , 2002 .

[13]  D. Tsoukalas,et al.  Recent advances in nanoparticle memories , 2005 .

[14]  Z. Yu,et al.  Single electron charging in Si nanocrystals embedded in silicon-rich oxide , 2003 .

[15]  L. Perniola,et al.  Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

[16]  Jang‐Sik Lee Recent progress in gold nanoparticle-based non-volatile memory devices , 2010 .

[17]  Sang Yeol Lee,et al.  Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs , 2010, IEEE Electron Device Letters.

[18]  Sandip Tiwari,et al.  Fast and long retention-time nano-crystal memory , 1996 .

[19]  S. Straub,et al.  Silicon nanocrystal based memory devices for NVM and DRAM applications , 2004 .

[20]  B. Garrido,et al.  Control of tunnel oxide thickness in Si-nanocrystal array memories obtained by ion implantation and its impact in writing speed and volatility , 2003 .

[21]  A. Sawa Resistive switching in transition metal oxides , 2008 .

[22]  B. Pécz,et al.  Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals , 2007 .

[23]  C. Yoon,et al.  Formation of gold nanoparticles embedded in a polyimide film for nanofloating gate memory , 2007 .

[24]  Wei Lin Leong,et al.  Charging phenomena in pentacene-gold nanoparticle memory device , 2007 .

[25]  Jyun-Yi Wu,et al.  Bandgap engineering of tunnel oxide with multistacked layers of Al2O3/HfO2/SiO2 for Au-nanocrystal memory application , 2008 .

[26]  Sungnam Chang,et al.  Floating gate technology for high performance 8-level 3-bit NAND flash memory , 2009, ESSDERC 2009.

[27]  Jaegab Lee,et al.  Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer , 2009 .

[28]  Jang-Sik Lee,et al.  Flexible organic transistor memory devices. , 2010, Nano letters.

[29]  Sungho Kim,et al.  Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application , 2009 .

[30]  Soo Jin Kim,et al.  Transparent organic thin-film transistors and nonvolatile memory devices fabricated on flexible plastic substrates , 2011 .

[31]  Thierry Baron,et al.  Growth of Si nanocrystals on alumina and integration in memory devices , 2003 .

[32]  Soo-Jin Kim,et al.  Organic-Transistor-Based Nano-Floating-Gate Memory Devices Having Multistack Charge-Trapping Layers , 2010, IEEE Electron Device Letters.

[33]  Jang-Sik Lee,et al.  Progress in non-volatile memory devices based on nanostructured materials and nanofabrication , 2011 .

[34]  Jaegab Lee,et al.  Nonvolatile nanocrystal charge trap flash memory devices using a micellar route to ordered arrays of cobalt nanocrystals , 2007 .

[35]  Carla Golla,et al.  Flash Memories , 1999 .

[36]  Soo-Jin Kim,et al.  Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers , 2010 .

[37]  S. Lee,et al.  Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition , 2011 .

[38]  Kinam Kim,et al.  Memory technology in the future , 2007 .

[39]  Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films , 2002, cond-mat/0208137.

[40]  Su-Ting Han,et al.  Microcontact Printing of Ultrahigh Density Gold Nanoparticle Monolayer for Flexible Flash Memories , 2012, Advanced materials.

[41]  Jae Sung Sim,et al.  Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons , 2011, Advanced materials.

[42]  Jang‐Sik Lee,et al.  Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices , 2008 .

[43]  Jang‐Sik Lee Review paper: Nano-floating gate memory devices , 2011 .

[44]  Ananth Dodabalapur,et al.  Non‐Volatile Organic Memory Applications Enabled by In Situ Synthesis of Gold Nanoparticles in a Self‐Assembled Block Copolymer , 2008 .

[45]  Nripan Mathews,et al.  Towards printable organic thin film transistor based flash memory devices , 2011 .

[46]  H. Hwang,et al.  Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory , 2007 .

[47]  Su‐Ting Han,et al.  Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate) , 2012, Nanotechnology.

[48]  A. G. Nassiopoulou,et al.  Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing , 2003 .

[49]  Yi Su,et al.  Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric , 2006, IEEE Transactions on Nanotechnology.

[50]  Jaegab Lee,et al.  Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications , 2009 .

[51]  M. Kovalenko,et al.  Prospects of colloidal nanocrystals for electronic and optoelectronic applications. , 2010, Chemical reviews.

[52]  Pascal Normand,et al.  Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing , 2000 .

[53]  Wei Lin Leong,et al.  Solution processed non-volatile top-gate polymer field-effect transistors , 2011 .

[54]  Panagiotis Dimitrakis,et al.  Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation , 2004 .

[55]  Ya-Chin King,et al.  A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide , 1999 .

[56]  H. Hamann,et al.  Ultra-high-density phase-change storage and memory , 2006, Nature materials.

[57]  Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition , 2006 .

[58]  Edwin C. Kan,et al.  Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications , 2005 .