Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography
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[1] Takeo Hashimoto,et al. Comparison between optical proximity effect of positive and negative tone patterns in KrF lithography , 1997, Advanced Lithography.
[2] Richard A. Di Pietro,et al. 193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system , 1995, Advanced Lithography.
[3] Shigeyuki Iwasa,et al. Effect of polymer structure on dissolution-rate characteristics in carboxylated alicyclic polymers for 193-nm lithography , 1997, Advanced Lithography.
[4] Katsumi Maeda,et al. Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography , 1996, Advanced Lithography.
[5] Katsumi Maeda,et al. Function-integrated alicyclic polymer for ArF chemically amplified resists , 1997, Advanced Lithography.
[6] Katsumi Maeda,et al. Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer , 1995, Advanced Lithography.
[7] Takeshi Ohfuji,et al. Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists , 1996, Advanced Lithography.
[8] Naomi Shida,et al. NOVEL ArF EXCIMER LASER RESISTS BASED ON MENTHYL METHACRYLATE TERPOLYMER , 1996 .
[9] Naomichi Abe,et al. Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification , 1992, Advanced Lithography.
[10] Jun-ichi Yano,et al. Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist , 1994, Advanced Lithography.
[11] Ei Yano,et al. Impact of 2-Methyl-2-Adamantyl Group Used for 193-nm Single-layer Resist , 1996 .
[12] Naomichi Abe,et al. Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography , 1995, Advanced Lithography.
[13] R. D. Allen,et al. RESOLUTION AND ETCH RESISTANCE OF A FAMILY OF 193nm POSITIVE RESISTS , 1995 .