论文信息 - Two Dimensional Analytical Modeling Of A Nanoscale Dual Material Gate MOSFETS

Two Dimensional Analytical Modeling Of A Nanoscale Dual Material Gate MOSFETS

For more than 30 years, the IC industry has followed a steady path of constantly shrinking the device geometries and increasing chip size. A new gate structure called the dual material gate (DMG) MOSFET was proposed which eliminates the effects of reduction of chip size. A 2D analytical approach of DMG is proposed in this paper and the solution to the Poisson equation is obtained using parabolic expansion method. Using the boundary conditions, the surface potential and electric field potential distribution is obtained for different work function and channel lengths. Keyword: Dual material gate (DMG) MOSFET, parabolic expansion, surface potential, Electric field potential.

N. B. Balamurugan

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