论文信息 - Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistors

Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistors

Monolithically InP-based pin-MODFET front-end photoreceivers realised by molecular beam epitaxial regrowth have been characterised. The FWHM of the temporal response to photoexcitation for the full circuit was 60 ps which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3 dB frequency response of the circuit with an effective input load resistance of 33 Ω is 15.0 GHz. The performance of the pin-MODFET photoreceiver circuit is comparable to the best hybrid circuits with InP-based devices

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