ELECTRICAL PROPERTIES OF GAAS/GAN/GAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES

We report on the current‐voltage (IV) characteristics of GaAs/GaN/GaAs semiconductor‐insulator‐semiconductor structures as a function of temperature. IV measurements show a strong temperature dependence indicating a thermal distribution of carriers flowing over a barrier. From these data we deduce an effective conduction band barrier of 0.9 eV between GaAs and GaN.