论文信息 - Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics - 字舞流文

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

peixiong zhao | D. Fleetwood | P. Dodd | K. Galloway | J. Schwank | M. Shaneyfelt | L. Massengill | G. Lucovsky | Y. M. Lee | T. Meisenheimer | B. Choi | Robert S. Johnson