A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider

A bulk silicon divide-by-two dynamic frequency divider with maximum clock speed of 26.5 GHz has been achieved. The dynamic divider operates from 6.5 GHz to 26.5 GHz. The design is based on n-channel MOSFET's with an effective gate length of 0.1 μm.

[1]  M. Wurzer,et al.  53 GHz static frequency divider in a Si/SiGe bipolar technology , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[2]  K. Murata,et al.  74 GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs , 1999 .

[3]  E. Kaneshiro,et al.  InP DHBT 68 GHz frequency divider , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

[4]  Eiichi Sano,et al.  A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-/spl mu/m GaAs MESFET , 1995 .

[5]  Yasuhisa Omura,et al.  Low-power 1/2 frequency dividers using 0.1- mu m CMOS circuits built with ultrathin SIMOX substrates , 1993 .

[6]  Ran-Hong Yan,et al.  A 13.4-GHz CMOS frequency divider , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.

[7]  K. Washio,et al.  82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[8]  Eiichi Sano,et al.  80 GHz 4:1 frequency divider IC using nonself-aligned InP/InGaAs heterostructure bipolar transistors , 2000 .